參數(shù)資料
型號: GS8162Z18B-166
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 7 ns, PBGA119
封裝: FBGA-119
文件頁數(shù): 21/38頁
文件大小: 838K
代理商: GS8162Z18B-166
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GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.21 11/2004
21/38
1999, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.5
Min
4.4
1.5
Max
2.7
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
5.5
3.0
5.5
1.3
0.3
6.0
3.0
6.0
1.4
0.4
6.5
3.0
6.5
1.5
0.5
7.0
3.0
7.0
1.5
0.5
7.5
3.0
7.5
1.5
0.5
8.5
3.0
8.5
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.5
1.7
1.5
0.5
1.7
2
ns
ns
ns
ns
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
2.5
2.7
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
2.7
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
20
ns
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GS8162Z18B-166I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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