參數(shù)資料
型號(hào)： GS8162Z18D-133
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù)： 36/38頁(yè)
文件大?。?/td> 838K
代理商： GS8162Z18D-133
GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.21 11/2004
36/38
1999, GSI Technology
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS8162Z18/36/72B 1.00 9/
1999A;GS8162Z18/36/
72B2.0012/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
GS8162Z18/36/72B2.00 12/
1999BGS8162Z18/36/
72B2.01 1/2000C
Format
Added new GSI Logo
GS8162Z18/36/72B2.01 1/
2000C;GS8162Z18/36/
72B2.02 1/2000D
Content
Added 209 Pin BGA Package diagram
GS8162Z18/36/72B2.02 1/
2000DGS8162Z18/36/
72B2.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Pin 6N changed to MCH.
GS8162Z18/36/72B2.03 2/
2000E; 8162Z18_r2_04
Content
8162Z18_r2_04;
8162Z18_r2_05
Content
Updated BGA pin description tables to meet JEDEC
standards
8162Z18_r2_05;
8162Z18_42_06
Content
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 22 from 20 ns to 100 ns
8162Z18_r2_06;
8162Z18_r2_07
Content/Format
Added 225 MHz speed bin
Updated numbers in page 1 table, AC Characteristics table,
and Operating Currents table
Updated format to comply with Technical Publications
standards
Changed V
SSQ
references to V
SS
Changed K4 and K8 in 209-bump BGA to NC
8162Z18_r2_07;
8162Z18_r2_08
Content
8162Z18_r2_08;
8162Z18_r2_09
Content
Updated numbers for Clock to Output Valid (PL) and Clock to
Output Valid (FT) for 166 MHz and 133 MHz on AC Electrical
Characteristics table
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 14
8162Z18_r2_09;
8162Z18_r2_10
Content
相關(guān)PDF資料
PDF描述
GS8162Z18D-133I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18D-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18D-150I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18D-166 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18D-166I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8162Z18D166 制造商:G.S.I. 功能描述:
GS8162Z18DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS8162Z18DB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS8162Z18DB-200V 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS8162Z18DB-250 制造商:GSI Technology 功能描述:119 BGA - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*