參數(shù)資料
型號: GS8162Z36D-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 512K X 36 ZBT SRAM, 6 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 8/38頁
文件大小: 838K
代理商: GS8162Z36D-225
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GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.21 11/2004
8/38
1999, GSI Technology
GS8162Z18/36 119-Bump and 165-Bump BGA Pin Description
BPR1999.05.18
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
B
A
, B
B
, B
C
, B
NC
CK
CKE
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
I/O
Data Input and Output pins
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
I
I
PE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
I
Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36 Mode)
I
I
I
I
I
I
I
I
I
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
V
DD
V
SS
V
DDQ
I
Scan Test Clock
I
Core power supply
I
I/O and Core Ground
I
Output driver power supply
相關PDF資料
PDF描述
GS8162Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8162Z36 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8162Z72 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8162Z72CC-200IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-150IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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