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參數資料
| 型號： | L6731BTR |
| 廠商： | 意法半導體 |
| 英文描述： | Transistor; Type: Amplifiers/Bipolar; VCEO (V): -25; Ic (A): -1; Pc (W): 0.8; hFE: 85 to 330; VCE (sat) (V) max: -0.5; Package: TO-92Mod |
| 中文描述： | 可調式降壓同步整流專用的DDR控制器內存 |
| 文件頁數： | 14/24頁 |
| 文件大?。?/td> | 311K |
| 代理商： | L6731BTR |
Device description
L6731B
14/24
5.8
Monitoring and protections
The output voltage is monitored by means of pin FB. If it is not within ±10% (typ.) of the
programmed value, the Power-Good (PGOOD) output is forced low. The device provides over-
voltage-protection: when the voltage sensed on FB pin reaches a value 20% (typ.) greater than
the reference, the low-side driver is turned on as long as the over voltage is detected (see
Figure 7.
).
It must be taken into account that there is an electrical network between the output terminal and
the FB pin and therefore the voltage at the pin is not a perfect replica of the output voltage.
However due to the fact that the converter can sink current, in the most of cases the low-side
will turn-on before the output voltage exceeds the over-voltage threshold, because the error
amplifier will throw off balance in advance. Even if the device doesn't report an over-voltage, the
behavior is the same, because the low-side is turned-on immediately. The following figure
shows the device behavior during an over-voltage event. The output voltage rises with a slope
of 100mV/μs, emulating in this way the breaking of the high-side MOSFET as an over-voltage
cause.
Figure 7.
OVP
LGate
FB
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