參數(shù)資料
型號(hào)： GS8321Z18E-225
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述： 2M X 18 ZBT SRAM, 7 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 27/34頁(yè)
文件大小： 746K
代理商： GS8321Z18E-225
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
V
IHJ3
V
ILJ3
V
IHJ2
V
ILJ2
I
INHJ
I
INLJ
I
OLJ
V
OHJ
V
OLJ
V
OHJC
V
OLJC
Min.
Max.
V
DD3
+0.3
Unit Notes
3.3 V Test Port Input High Voltage
2.0
V
1
3.3 V Test Port Input Low Voltage
–
0.3
0.8
V
1
2.5 V Test Port Input High Voltage
0.6 * V
DD2
V
DD2
+0.3
0.3 * V
DD2
V
1
2.5 V Test Port Input Low Voltage
–
0.3
V
1
TMS, TCK and TDI Input Leakage Current
–
300
1
uA
2
TMS, TCK and TDI Input Leakage Current
–
1
100
uA
3
TDO Output Leakage Current
–
1
1
uA
4
Test Port Output High Voltage
1.7
—
V
5, 6
Test Port Output Low Voltage
—
0.4
V
5, 7
Test Port Output CMOS High
V
DDQ
– 100 mV
—
V
5, 8
Test Port Output CMOS Low
—
100 mV
V
5, 9
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Input Under/overshoot voltage must be
–
2 V < Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
V
ILJ
≤
V
IN
≤
V
DDn
0 V
≤
V
IN
≤
V
ILJn
Output Disable, V
OUT
= 0 to V
DDn
The TDO output driver is served by the V
DDQ
supply.
I
OHJ
=
–
4 mA
I
OLJ
= + 4 mA
I
OHJC
= –100 uA
I
OLJC
= +100 uA
GS8321Z18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06b 2/2006
27/34
2003, GSI Technology
JTAG Port AC Test Conditions
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as shown unless otherwise noted.
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DDQ
/2
V
DDQ
/2
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
DQ
V
DDQ
/2
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
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GS8321Z18E-225IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-225V 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 7NS/2.7NS 165FPBGA - Trays
GS8321Z18E-250 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 2MX18 6.5NS/2.5NS 165FBGA - Trays
GS8321Z18E-250I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 2MX18 6.5NS/2.5NS 165FBGA - Trays
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