參數(shù)資料
型號: GS8322ZV72GC-150IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 11/39頁
文件大?。?/td> 1887K
代理商: GS8322ZV72GC-150IT
GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03a 2/2006
19/39
2002, GSI Technology
Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Capacitance
oC, f = 1 MHZ, VDD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Note:
These parameters are sample tested.
(TA = 25
= 2.5 V)
相關(guān)PDF資料
PDF描述
GS8322ZV36GB-200T 1M X 36 ZBT SRAM, 7.5 ns, PBGA119
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