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參數(shù)資料
| 型號： | GS84036AT-100 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s |
| 中文描述： | 256 × 18，128K的× 32，128K的× 36 4Mb的同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 911K |
| 代理商： | GS84036AT-100 |
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Rev: 1.12 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/31
1999, Giga Semiconductor, Inc.
Preliminary
GS84018/32/36AT/B-180/166/150/100
Mode Pin Functions
Note:
There are pull-up devices on LBO and FT pins and a pull down device on the ZZ pin, so those input pins can be
unconnected and the chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
H or NC
L
H or NC
L or NC
Output Register Control
FT
Power Down Control
ZZ
H
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte
A
H
L
L
H
H
H
2, 3
Write byte
B
H
L
H
L
H
H
2, 3
Write byte
C
H
L
H
H
L
H
2, 3, 4
Write byte
D
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS84036AT-100I | Flasher; Contacts:DPDT; Time Range:0.6 sec. to 60 sec.; Timing Function:Adjustable Recycling; Contact Carrying Power:3W; Supply Voltage:12VDC |
| GS84018 | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS84032 | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS84036 | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840E18A | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS84036AT-100I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84036AT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84036AT-150I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84036AT-166 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84036AT-166I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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