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參數(shù)資料
| 型號： | GS840FH18A |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 4Mb的（256 × 18位）同步突發(fā)靜態(tài)存儲器（4分位（256 × 18位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 12/22頁 |
| 文件大小： | 787K |
| 代理商： | GS840FH18A |
Rev: 1.03 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
12/22
1999, Giga Semiconductor, Inc.
.
Preliminary
GS840FH18/32/36AT-7.5/8/8.5/10/12
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
2.
3.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
= 3.3 V
V
IN
= 0 V
V
OUT
= 0 V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
1,2,4
Junction to Case (TOP)
—
9
3,4
20% tKC
V
SS
-2.0V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+-2.0V
50%
V
DD
V
IL
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