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參數(shù)資料
| 型號： | GS840FH36A |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 4Mb的（128K的x 36Bit）同步突發(fā)靜態(tài)存儲器（4分位（128K的× 36位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 787K |
| 代理商： | GS840FH36A |
Rev: 1.03 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
10/22
1999, Giga Semiconductor, Inc.
.
Preliminary
GS840FH18/32/36AT-7.5/8/8.5/10/12
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
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| GS840H18A | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H36A | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
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參數(shù)描述 |
|---|---|
| GS840FH36AGT-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840FH36AGT-10I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840FH36AGT-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840FH36AGT-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840FH36AGT-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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