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參數(shù)資料
| 型號： | GS840H36A |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 4Mb的（128K的x 36Bit）同步突發(fā)靜態(tài)存儲器（4分位（128K的× 36位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 15/31頁 |
| 文件大?。?/td> | 940K |
| 代理商： | GS840H36A |
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Rev: 1.07 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
15/31
1999, Giga Semiconductor, Inc.
Preliminary
GS840H18/32/36AT/B-200/180/166/150/100
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Recommended Operating Conditions
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V
≤
VDDQ
≤
2.375V (i.e. 2.5V I/O)
and 3.6V
≤
VDDQ
≤
3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3V and 2.5V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be -2V > Vi < V
DD
+2V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
Description
Value
Unit
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on Clock Input Pin
–0.5 to 4.6
V
–0.5 to V
DD
–0.5 to 6
V
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
+/–20
V
Voltage on Other Input Pins
V
Input Current on Any Pin
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
Temperature Under Bias
–-55 to 125
o
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
T
A
T
A
3.135
3.3
3.6
V
DD
V
I/O Supply Voltage
2.375
2.5
V
1
Input High Voltage
1.7
—
V
DD
+0.3
0.8
V
2
Input Low Voltage
–0.3
—
V
°
C
°
C
2
Ambient Temperature (Commercial Range Versions)
0
25
70
3
Ambient Temperature (Industrial Range Versions)
–40
25
85
3
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| GS840H32 | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H18 | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H36 | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| GS840H36AB-100 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX36 12NS/4.5NS 119FBGA - Trays |
| GS840H36AB-100I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX36 12NS/4.5NS 119FBGA - Trays |
| GS840H36AB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX36 10NS/3.8NS 119FBGA - Trays |
| GS840H36AB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX36 10NS/3.8NS 119FBGA - Trays |
| GS840H36AB-166 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX36 8.5NS/3.5NS 119FBGA - Trays |
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