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參數(shù)資料
| 型號： | GS841E18AT-166I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 18 Sync Cache Tag |
| 中文描述： | 256K X 18 CACHE TAG SRAM, 8.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 421K |
| 代理商： | GS841E18AT-166I |
GS841E18AT/B-180/166/150/130/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
13/21
2001, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-180
-166
-150
-133
-100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
5.5
—
6.0
—
6.7
—
7.5
—
10
—
ns
Clock to Output Valid
tKQ
—
3.2
—
3.5
—
3.8
—
4
—
4.5
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Match Valid
tKM
—
3.2
—
3.5
—
3.8
—
4
—
4.5
ns
Clock to Match Invalid
tKMX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Match in Low-Z
tMLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Flow
Through
Clock Cycle Time
tKC
9.1
—
10.0
—
10.0
—
15.0
—
15.0
—
ns
Clock to Output Valid
tKQ
—
8.0
—
8.5
—
10.0
—
11.0
—
12.0
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ
1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Match Valid
tKM
—
8.5
—
8.5
—
10.0
—
11.0
—
12.0
ns
Clock to Match Invalid
tKMX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Match in Low-Z
tMLZ
1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.5
—
1.7
—
2
—
ns
Clock LOW Time
tKL
1.5
—
1.5
—
1.7
—
1.9
—
2.2
—
ns
Clock to Output in High-Z
tHZ
1
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4
1.5
5
ns
OE to Output Valid
tOE
—
3.2
—
3.5
—
3.8
—
4
—
5
ns
OE to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
ns
OE to output in High-Z
tOHZ
1
—
3.2
—
3.5
—
3.8
—
4
—
5
ns
MOE to Match Valid
tMOE
—
3.2
—
3.5
—
3.8
—
4
—
5
ns
MOE to Match in Low-Z
tMOLZ
1
0
—
0
—
0
—
0
—
0
—
ns
MOE to Match in High-Z
tMOHZ
1
—
3.2
—
3.5
—
3.8
—
4
—
5
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
2.0
—
2.0
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS841E18AT-180 | 256K x 18 Sync Cache Tag |
| GS841E18AT-180I | 256K x 18 Sync Cache Tag |
| GS841Z18AGT-100 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-100I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS841E18AT-180 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS841E18AT-180I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS841Z18AGT-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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