參數資料
型號: GS841Z18AT-100I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述: 256K X 18 ZBT SRAM, 12 ns, PQFP100
封裝: TQFP-100
文件頁數: 15/30頁
文件大?。?/td> 495K
代理商: GS841Z18AT-100I
GS841Z18/36AT-180/166/150/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 11/2004
15/30
2001, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
100 uA
FT Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH2
V
OH3
V
OL
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
Operating Currents
Parameter
Test Conditions
Symbol
-
180
-
166
-
150
-
100
Unit
0 to
70°C
–40 to
85°C
0 to
70°C
–40 to
85°C
0 to
70°C
–40 to
85°C
0 to
70°C
–40 to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
I
DD
Pipeline
I
DD
Flow-Thru
I
SB
Pipeline
I
SB
Flow-Thru
I
DD
Pipeline
I
DD
Flow-Thru
335
345
310
320
280
290
190
200
mA
210
220
190
200
165
175
135
145
mA
Standby
Current
ZZ
V
DD
0.2 V
20
30
20
30
20
30
20
30
mA
20
30
20
30
20
30
20
30
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
55
65
50
60
50
60
40
50
mA
40
50
40
50
35
45
35
45
mA
相關PDF資料
PDF描述
GS841Z18AT-150 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
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GS841Z18AT-166I 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z18AT-180 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
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