參數(shù)資料
型號(hào)： GS841Z18AT-180
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述： 256K X 18 ZBT SRAM, 8 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 12/30頁(yè)
文件大?。?/td> 495K
代理商： GS841Z18AT-180
GS841Z18/36AT-180/166/150/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 11/2004
12/30
2001, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS841Z18AT-180I 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-100 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-100I 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-150 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-150I 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS841Z18AT-180I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z18CGT-150 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays
GS841Z36AGT-100 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-100I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS841Z36AGT-150 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs
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