參數(shù)資料
型號(hào): GS8640E32GT-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 32 CACHE SRAM, 6.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù): 23/23頁(yè)
文件大?。?/td> 601K
代理商: GS8640E32GT-250V
72Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
8640EVxx_r1
Creation of new datasheet
8640EVxx_r1;
8640Exx_V_r_01
Content
Updated entire document to reflect new part nomenclature
Removed 300 MHz speed bin
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
23/23
2004, GSI Technology
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8640E32T-167IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E32T-167V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E32T-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E32T-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E32T-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs