參數(shù)資料
型號: GS8640V18GT-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁數(shù): 17/23頁
文件大?。?/td> 452K
代理商: GS8640V18GT-250I
GS8640V18/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
17/23
2004, GSI Technology
Pipeline Mode Timing (SCD)
Begin
Read A
Cont
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
Burst Read
tKL
tKC
tKH
Single Write
Single Read
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Deselected with E1
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
A0–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料
PDF描述
GS8640V18GT-300I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-167 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-167I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-200 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8640V18GT-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-167I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V18T-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs