參數(shù)資料
型號: GS8640V36T-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 10/23頁
文件大?。?/td> 452K
代理商: GS8640V36T-250
GS8640V18/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
10/23
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關PDF資料
PDF描述
GS8640V36T-250I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-300 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-300I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V32GT-167 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V32GT-167I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS8640V36T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640Z18GT-167 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 72MBIT 4MX18 8NS/3.5NS 100TQFP - Trays
GS8640Z18GT-167I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 4MX18 8NS/3.5NS 100TQFP - Trays