參數(shù)資料
型號(hào): GS8640Z18T-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 4M X 18 ZBT SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 12/25頁(yè)
文件大小: 618K
代理商: GS8640Z18T-200
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8640Z18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 1/2006
12/25
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
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GS8640Z18T-200I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8640Z18T-300 72Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8640Z18T-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM