參數(shù)資料
型號(hào): GS8644V72C-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 24/40頁
文件大?。?/td> 843K
代理商: GS8644V72C-250I
Product Preview
GS8644V18(B/E)/GS8644V36(B/E)/GS8644V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
24/40
2003, GSI Technology
Pipeline Mode Timing (DCD)
Begin
Read A
Cont
Deselect Deselect Write B
Read C
Read C+1Read C+2Read C+3Cont
Deselect Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
tKC
tKL
tKH
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Hi-Z
Deselected with E1
E2 and E3 only sampled with ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
Ao–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料
PDF描述
GS8644V18B 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-133 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-133I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-150 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-150I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
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