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參數(shù)資料
| 型號： | GS8644Z18E-166I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CONN 2MM SKT 26POS THRU-BRD SMD |
| 中文描述： | 72Mb流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 16/39頁 |
| 文件大?。?/td> | 1174K |
| 代理商： | GS8644Z18E-166I |
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GS8644Z18(B/E)/GS8644Z36(B/E)/GS8644Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
16/39
2003, GSI Technology
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
FLXDrive
The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive
strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details.
Mode Pin Functions
Note:
There are pull-up devices onthe ZQ and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip
will operate in the default states as specified in the above tables.
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, I
DD
= I
SB
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
相關PDF資料 |
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|---|---|
| GS8644Z18E-200 | CONN 2MM SKT 30POS THRU-BRD SMD |
| GS8644Z18E-200I | CONN 2MM SKT 32POS THRU-BRD SMD |
| GS8644Z18E-225 | CONN 2MM SKT 36POS THRU-BRD SMD |
| GS8644Z18E-225I | CONN 2MM SKT 40POS THRU-BRD SMD |
| GS8644Z18E-250 | CONN 2MM SKT 42POS THRU-BRD SMD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8644Z18E-166IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 7NS/2.9NS 165FPBGA - Trays |
| GS8644Z18E-166V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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