- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383050 > GS8644Z18E-225 (Electronic Theatre Controls, Inc.) CONN 2MM SKT 36POS THRU-BRD SMD PDF資料下載
參數(shù)資料
| 型號： | GS8644Z18E-225 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CONN 2MM SKT 36POS THRU-BRD SMD |
| 中文描述： | 72Mb流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 12/39頁 |
| 文件大?。?/td> | 1174K |
| 代理商： | GS8644Z18E-225 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
Product Preview
GS8644Z18(B/E)/GS8644Z36(B/E)/GS8644Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
12/39
2003, GSI Technology
Synchronous Truth Table
Operation
Type
Address
CK CKE ADV W Bx E
1
E
2
E
3
G ZZ
DQ
Notes
Read Cycle, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
L
L
Q
Read Cycle, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
L
L
Q
1,10
NOP/Read, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
H
L
High-Z
2
Dummy Read, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
H
L
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L-H
L
L
L
L
L
H
L
X
L
D
3
Write Cycle, Continue Burst
B
Next
L-H
L
H
X
L
X
X
X
X
L
D
1,3,10
Write Abort, Continue Burst
B
Next
L-H
L
H
X
H
X
X
X
X
L
High-Z 1,2,3,10
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
H
X
X
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
X
H
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
L
X
X
L
High-Z
Deselect Cycle
D
None
L-H
L
L
L
H
L
H
L
X
L
High-Z
1
Deselect Cycle, Continue
D
None
L-H
L
H
X
X
X
X
X
X
L
High-Z
1
Sleep Mode
None
X
X
X
X
X
X
X
X
X
H
High-Z
Clock Edge Ignore, Stall
Current
L-H
H
X
X
X
X
X
X
X
L
-
4
Notes:
1.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
2.
3.
4.
5.
6.
7.
8.
9.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8644Z18E-225I | CONN 2MM SKT 40POS THRU-BRD SMD |
| GS8644Z18E-250 | CONN 2MM SKT 42POS THRU-BRD SMD |
| GS8644Z18E-250I | CONN 2MM SKT 44POS THRU-BRD SMD |
| GS8644Z36 | CONN 2MM SKT 46POS THRU-BRD SMD |
| GS8644Z36B | CONN 2MM SKT 50POS THRU-BRD SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8644Z18E-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-225IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-225V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z18E-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 165FBGA - Trays |
| GS8644Z18E-250I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 165FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。