參數(shù)資料
型號: GS8662R08GE-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 31/37頁
文件大?。?/td> 942K
代理商: GS8662R08GE-200I
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Input High Voltage
V
IH
1.3
V
DD
+ 0.3
V
Input Low Voltage
V
IL
0.3
0.5
V
Output High Voltage (I
OH
= –2 mA)
V
OH
1.4
V
DD
V
Output Low Voltage (I
OL
= 2 mA)
V
OL
V
SS
0.4
V
Note: The input level of SRAM pin is to follow the SRAM DC specification.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
31/37
2005, GSI Technology
Notes:
1.
2.
Distributed scope and test jig capacitance.
Test conditions as shown unless otherwise noted.
JTAG Port AC Test Conditions
Parameter
Symbol
Min
Unit
Input High/Low Level
V
IH
/V
IL
1.3/0.5
V
Input Rise/Fall Time
TR/TF
1.0/1.0
ns
Input and Output Timing Reference Level
0.9
V
相關(guān)PDF資料
PDF描述
GS8662R08GE-250 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-250I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-300 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-300I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
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