參數(shù)資料
型號(hào)： GS880Z18AT-250
廠商： Electronic Theatre Controls, Inc.
英文描述： 9Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 9MB的流水線(xiàn)和流量，通過(guò)同步唑的SRAM
文件頁(yè)數(shù)： 14/25頁(yè)
文件大小： 753K
代理商： GS880Z18AT-250
Rev: 1.02 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/25
2001, Giga Semiconductor, Inc.
GS880Z18/36AT-250/225/200/166/150/133
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相關(guān)PDF資料
PDF描述
GS880Z18AT-250I 2 MG 3.3V OTP PROM (UMC) - NOT RECOMMENDED for NEW DESIGN
GS880Z18AT-133 9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z18AT-133I 9Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS880Z18AT-150I 9Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS880Z18AT-250I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z18BGT-150 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z18BGT-150I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z18BGT-150IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z18BGT-150V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
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