參數(shù)資料
型號(hào): GS88132BT-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 32 CACHE SRAM, 5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 14/39頁
文件大?。?/td> 791K
代理商: GS88132BT-300
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/39
2002, GSI Technology
Simplified State Diagram
相關(guān)PDF資料
PDF描述
GS88132BT-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88132BT-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132CD-150 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 8MBIT 256KX32 7.5NS/3.8NS 165FPBGA - Trays
GS88132CD-250 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 8MBIT 256KX32 5.5NS/2.5NS 165FPBGA - Trays
GS88132CD-300I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 8MBIT 256KX32 5NS/2.5NS 165FPBGA - Trays
GS88132CD-333 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 8MBIT 256KX32 4.5NS/2.5NS 165FPBGA - Trays