參數(shù)資料
型號(hào): GS88136BD-150
廠(chǎng)商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 21/39頁(yè)
文件大小: 791K
代理商: GS88136BD-150
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
3.3
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
2.5
2.5
2.5
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.0
1.0
1.2
1.4
1.5
ns
Hold time
tH
0.1
0.1
0.2
0.4
0.5
ns
Flow
Through
Clock Cycle Time
tKC
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
2.0
2.0
ns
Setup time
tS
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.3
0.4
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.0
1.0
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.2
1.2
1.5
1.5
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
2.5
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
2.5
2.5
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
ns
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
21/39
2002, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
PDF描述
GS88136BD-150I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88136BD-150I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200 制造商: 功能描述: 制造商:undefined 功能描述:
GS88136BD-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs