參數(shù)資料
型號(hào): GS881E18
廠商: GSI TECHNOLOGY
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 為512k × 18,256K × 36 9Mb以上同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù): 9/37頁
文件大小: 662K
代理商: GS881E18
GS881E18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
9/29
2001, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Synchronous
Operation
Simple
Burst
Synchronou
sOperation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
相關(guān)PDF資料
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GS881E36CGD-250IT 256K X 36 CACHE SRAM, 5.5 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E18AD-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-133IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-133T 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs