參數(shù)資料
型號: GS881Z36BGT-250IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 ZBT SRAM, 5.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 15/39頁
文件大?。?/td> 1318K
代理商: GS881Z36BGT-250IT
GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D)
Rev: 1.06a 2/2008
22/39
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-333
-300
-250
-200
-150
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Pipeline
IDD
IDDQ
250
40
270
40
230
35
250
35
200
30
220
30
170
25
190
25
140
20
160
20
mA
Flow
Through
IDD
IDDQ
205
25
225
25
185
25
205
25
160
25
180
25
140
20
160
20
130
15
150
15
mA
(x18)
Pipeline
IDD
IDDQ
230
20
250
20
210
20
230
20
185
15
205
15
155
15
175
15
130
10
150
10
mA
Flow
Through
IDD
IDDQ
185
15
205
15
170
15
190
15
145
15
165
15
130
10
150
10
120
8
140
8
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
Pipeline
ISB
40
50
40
50
40
50
40
50
40
50
mA
Flow
Through
ISB
40
50
40
50
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
95
100
90
95
85
90
75
80
60
65
mA
Flow
Through
IDD
65
60
65
60
65
50
55
50
55
mA
Not
Recommended
for
New
Design
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