參數(shù)資料
型號(hào): GS88218BB-200IV
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
封裝: FPBGA-119
文件頁(yè)數(shù): 20/35頁(yè)
文件大?。?/td> 863K
代理商: GS88218BB-200IV
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/35
2002, GSI Technology
Pipeline Mode Timing (DCD)
Begin
Read A
Cont
Deselect Deselect Write B
Read C
Read C+1Read C+2Read C+3Cont
Deselect Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
tKC
tKL
tKH
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Hi-Z
Deselected with E1
E2 and E3 only sampled with ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
Ao–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料
PDF描述
GS88218BB-200V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BGB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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