參數(shù)資料
型號: GS88236BB-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 23/37頁
文件大?。?/td> 751K
代理商: GS88236BB-250
GS88218/36BB/D-333/300/250/200/150
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
23/37
2002, GSI Technology
Flow Through Mode Timing (DCD)
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Begin
Read A
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Deselect
tHZ
tKQX
tLZ
tH
tS
tOHZ
tOE
tKQ
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
ADSC initiated read
tS
tH
tS
tKC
tKL
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSP and ADSC
E1 masks ADSP
Deselected with E1
E1 masks ADSP
Fixed High
CK
ADSP
ADSC
ADV
Ao–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關PDF資料
PDF描述
GS88236BB-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BB-300I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BB-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BB-333I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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