參數(shù)資料
型號(hào): GS88237BGD-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K X 36 CACHE SRAM, 2.2 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁(yè)數(shù): 14/29頁(yè)
文件大?。?/td> 577K
代理商: GS88237BGD-300
GS88237BB/D-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
14/29
2002, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
3.3
4.0
5.0
ns
Clock to Output Valid
tKQ
2.0
2.2
2.3
2.7
ns
Clock to Output Invalid
tKQX
1.0
1.0
1.0
1.0
ns
Clock to Output in Low-Z
tLZ
1
1.0
1.0
1.0
1.0
ns
Setup time
tS
1.0
1.1
1.2
1.4
ns
Hold time
tH
0
0.1
0.2
0.4
ns
G to Output Valid
tOE
2.0
2.2
2.3
2.5
ns
G to output in High-Z
tOHZ
1
2.0
2.2
2.3
2.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
ns
Clock to Output in
High-Z
tHZ
1
1.0
2.0
1.0
2.2
1.5
2.3
1.5
3.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
ns
ZZ setup time
tZZS
2
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
ns
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