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參數(shù)資料
| 型號： | GS882Z18B-66 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 8MB的流水線和流量，通過同步唑靜態(tài)存儲器 |
| 文件頁數(shù)： | 16/34頁 |
| 文件大?。?/td> | 802K |
| 代理商： | GS882Z18B-66 |
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Rev: 1.15 6/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
16/34
1998, Giga Semiconductor, Inc.
Preliminary
.
GS882Z18/36B-11/100/80/66
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
40
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
– 2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
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| GS882Z18BD150 | 制造商:G.S.I. 功能描述: |
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| GS882Z18CB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS882Z18CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS882Z18CB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
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