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參數(shù)資料
| 型號(hào)： | GSDS50020 |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 50A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁| 50A條一（c）|至3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | GSDS50020 |
Data S heet No. GS DS 50018 &
GS DS 50020
GSDS
50018
GSDS
50020
Ratings
Symbol
Unit
Maximum Ratings
-65 to +200
Storage Temperature
T
(stg)
-65 to +200
-65 to +200
o
C
o
C
Operating Junction Temperature
T
J(oper)
-65 to +200
W
Junction to Case Thermal Resistance
R
J-C
1
1
o
C/W
Total Power Dissipation @ T
C
= 25
o
C
P
D
100
100
Collector Current Continuous
50
75
20
Collector Current Peak
Base Current Continuous
Collector-Base Voltage
200
Emitter-Base Voltage
7
A
I
CM
75
A
I
B
20
A
V
V
V
CBO
180
V
EBO
7
I
C
50
Test Conditions
Symbol
Min
Max
Min
Max
Unit
Resistive Load
V
CC
= 100 V
I
C
= 50 A
I
B1
= I
B2
= 10 A
t
P
10 μS duty cycle
t
D
t
R
t
S
t
F
---
---
---
---
0.04
0.2
0.75
0.18
---
---
---
---
0.04
0.2
0.75
0.18
μs
μs
μs
μs
I
CEX
10
8
I
C
= 50 A, I
B
= 10 A
V
CE(sat)
1
---
V
CE
= 4.0 V, I
C
= 50 mA
h
FE
I
E
= 1.0 mA
7
---
---
I
E
= V
EB
= 6.0 V
V
CE
= 80% Rated
I
C
= 1.0 mA
200
I
C
= 50 mA
200
I
EBO
100
μA
I
CEO
50
---
---
V
V
V
V
CBO
---
V
CEO
---
V
EBO
---
7
GSDS50018
GSDS50020
180
180
---
---
---
100
---
750
8
---
---
---
---
750
V
μA
V
CE
= 80% Rated, V
BE
= -1.5 V
μA
μJ
50
10
---
---
L = 50 μH, V
BE(off)
= -1 V R
BB
= 47 Ohms
E
S/B
V
BE(sat)
---
2
---
1
2
V
V
CE
= 10 V, I
C
= 1.0 A, f = 10 MHz
|h
FE
|
3
---
3
---
---
I
C
= 50 A, I
B
= 10 A
---
350
pF
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
CB
= 10 V, f = 1 MHz
C
OBO
---
350
---
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