參數(shù)資料
型號: GSS4953
廠商: Electronic Theatre Controls, Inc.
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: P溝道增強型功率MOSFET
文件頁數(shù): 2/5頁
文件大?。?/td> 329K
代理商: GSS4953
Electrical Characteristics (Tj = 25
unless otherwise specified)
Parameter
Symbol
GSS4953 Page: 2/5
ISSUED DATE :2006/01/19
REVISED DATE :2006/11/09D
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BV
DSS
-30
-
-
V V
GS
=0, I
D
=-250uA
Gate Threshold Voltage
V
GS(th)
-1.0
-
-2.5
V V
DS
=V
GS
, I
D
=-250uA
Forward Transconductance
2
g
fs
-
5
-
S V
DS
=-5V, I
D
=-5A
Gate-Source Leakage Current
I
GSS
-
-
±100
nA V
GS
= ±16V
Drain-Source Leakage Current
I
DSS
-
-
-1
uA V
DS
=-24V, V
GS
=0
-
-
53
V
GS
=-10V, I
D
=-5A
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
90
m
V
GS
=-4.5V, I
D
=-4A
Total Gate Charge
2
Q
g
-
11.7
-
Gate-Source Charge
Q
gs
-
2.1
-
Gate-Drain (“Miller”) Change
Q
gd
-
2.9
-
nC
I
D
=-5A
V
DS
=-15V
V
GS
=-10V
Turn-on Delay Time
2
T
d(on)
-
9
-
Rise Time
T
r
-
10
-
Turn-off Delay Time
T
d(off)
-
37
-
Fall Time
T
f
-
23
-
ns
V
DS
=-15V
I
D
=-1A
V
GS
=-10V
R
G
=6
R
D
=15
Input Capacitance
C
iss
-
582
-
Output Capacitance
C
oss
-
125
-
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
C
rss
-
86
-
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage
2
Notes: 1. Surface Mounted on FR4 Board, t
10sec.
2. Pulse width
300us, duty cycle
V
SD
-
-0.84
-1.2
V I
S
=-1.7A, V
GS
=0V
2%.
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