型號(hào): | GT10J312(SM) |
元件分類: | 開關(guān) |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數(shù): | 5/7頁 |
文件大小: | 525K |
代理商: | GT10J312(SM) |
相關(guān)PDF資料 |
PDF描述 |
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GFU50N03 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GS9012 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GF4450 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GP250MLS06S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GS9012G/E6 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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GT10J312-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
GT10J321 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube |
GT10J321(Q) | 功能描述:IGBT 晶體管 IGBT, 600V, 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
GT10J321_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |
GT10M-6/1DP-DS | 制造商:HRS 制造商全稱:HRS 功能描述:Subminiature ECU Interface Connectors |