參數(shù)資料
型號(hào): GT20J311
元件分類: 開關(guān)
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 525K
代理商: GT20J311
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
K
Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
K
Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
K
Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
K
Double shell case
For high mechanical strength and high electrical insulation.
K
Compact size
The small rear end of the switch allows space saving behind the panel.
K
Finish
Matt black finish on body, bushing, lever and hardware.
K
Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
K
Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相關(guān)PDF資料
PDF描述
GS9013D/E7 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
GS8550BU TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
GT50J121 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
GT80J101A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
GN1A4Z-T2 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GT20J321 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 20A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:IGBT 600V TO-220NIS
GT20J321(Q) 功能描述:IGBT 晶體管 IGBT, 600V, 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
GT20J321_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications
GT20J341 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Discrete IGBTs Silicon N-Channel IGBT
GT21/13K 制造商:FLOWTECH 功能描述:MALE SCREW TAILPIECE 1/2" BSP X 1/2"