相關PDF資料 |
PDF描述 |
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GS8050CU-E7 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GSRU15030 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GN1A4M-T1 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT25G102 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GS8550TB/E6 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關代理商/技術參數 |
參數描述 |
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GT40Q321(Q) | 制造商:Toshiba 功能描述:Trans IGBT Chip N-CH 1.2KV 42A 3-Pin(3+Tab) TO-3PN |
GT40Q321_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
GT40Q322 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Voltage Resonance Inverter Switching Application |
GT40Q323 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT Voltage Resonance Inverter Switching Application |
GT40Q323(Q) | 功能描述:IGBT 晶體管 IGBT 1200V 39A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |