參數(shù)資料
型號(hào): GT80J101A
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-247VAR
中文描述: 晶體管| IGBT的|正陳| 600V的五(巴西)國(guó)際消費(fèi)電子展| 80A條一(c)|至247VAR
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 216K
代理商: GT80J101A
GT80J101A
2000-06-28 1/4
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type
G T 8 0 J 1 0 1 A
High Power Switching Applications
Enhancement-Mode
High Speed: t
f
=
0.40
μ
s (max) (I
C
=
80 A)
Low Saturation Voltage: V
CE (sat)
=
3.0 V (max) (I
C
=
80 A)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
V
GES
600
V
Gate-emitter voltage
±
20
V
DC
I
C
80
Collector current
1ms
I
CP
160
A
Collector power dissipation (Tc
=
25°C)
P
C
200
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
55~150
°C
Screw torque
0.8
N
·
m
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
=
±
25 V, V
CE
=
0
±
500
nA
Collector cut-off current
I
CES
V
CE
=
600 V, V
GE
=
0
1.0
mA
Gate-emitter cut-off voltage
V
GE (OFF)
V
CE
=
5 V, I
C
=
80 mA
3.0
6.0
V
V
CE (sat)
(1) I
C
=
10 A, V
GE
=
15 V
2.0
Collector-emitter saturation voltage
V
CE (sat)
(2) I
C
=
80 A, V
GE
=
15 V
2.4
3.0
V
Input capacitance
C
ies
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
5500
pF
Rise time
t
r
0.3
0.6
Turn-on time
t
on
0.5
0.8
Fall time
t
f
0.25
0.40
Switching time
Turn-off time
t
off
0.7
1.0
μ
s
Thermal resistance
R
th (j-c)
0.625
°C/W
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
961001EAA1
15 V
15 V
0
V
OUT
V
CC
=
300 V
3
V
IN
33
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