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參數(shù)資料
| 型號(hào)： | GTL2002 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 2-bit bi-directional low voltage translator |
| 中文描述： | 2位雙向電壓轉(zhuǎn)換低 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 114K |
| 代理商： | GTL2002 |
Philips Semiconductors
Product data sheet
GTL2002
2-bit bi-directional low voltage translator
2004 Sep 29
6
Sizing pull-up resistor
The pull-up resistor value needs to limit the current through the pass transistor when it is in the “on” state to about 15 mA. This will guarantee a
pass voltage of 260 mV to 350 mV. If the current through the pass transistor is higher than 15 mA, the pass voltage will also be higher in the
“on” state. To set the current through each pass transistor at 15 mA, the pull-up resistor value is calculated as follows:
Resistor value ( )
Pull–up voltage (V)
0.35 V
0.015 A
The table below summarizes resistor values for various reference voltages and currents at 15 mA and also at 10 mA and 3 mA. The resistor
value shown in the +10 % column or a larger value should be used to ensure that the pass voltage of the transistor would be 350 mV or less.
The external driver must be able to sink the total current from the resistors on both sides of the GTL–TVC device at 0.175 V, although the 15 mA
only applies to current flowing through the GTL–TVC device. See Application Note AN10145-01 Bi-Directional Voltage Translatorsfor more
information.
PULL-UP RESISTOR VALUES
PULL-UP RESISTOR VALUE (
)
VOLTAGE
15 mA
10 mA
3 mA
NOMINAL
+ 10 %
NOMINAL
+ 10 %
NOMINAL
+ 10 %
5.0 V
310
341
465
512
1550
1705
3.3 V
197
217
295
325
983
1082
2.5 V
143
158
215
237
717
788
1.8 V
97
106
145
160
483
532
1.5 V
77
85
115
127
383
422
1.2 V
57
63
85
94
283
312
NOTES:
1. Calculated for V
= 0.35 V
2. Assumes output driver V
= 0.175 V at stated current
3. +10 % to compensate for V
DD
range and resistor tolerance.
ABSOLUTE MAXIMUM RATINGS
1, 2, 3
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
SREF
V
DREF
V
GREF
V
Sn
V
Dn
I
REFK
I
SK
I
DK
I
MAX
T
stg
DC source reference voltage
–0.5 to +7.0
V
DC drain reference voltage
–0.5 to +7.0
V
DC gate reference voltage
–0.5 to +7.0
V
DC voltage Port S
n
DC voltage Port D
n
DC diode current on reference pins
–0.5 to +7.0
V
–0.5 to +7.0
V
V
I
< 0 V
V
I
< 0 V
V
I
< 0 V
–50
mA
DC diode current Port S
n
DC diode current Port D
n
DC clamp current per channel
–50
mA
–50
±
128
mA
Channel in ON-state
mA
°
C
Storage temperature range
–65 to +150
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
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