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參數(shù)資料
| 型號(hào)： | GVT71256C36TA-6 |
| 英文描述： | x36 Fast Synchronous SRAM |
| 中文描述： | x36快速同步SRAM |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | GVT71256C36TA-6 |
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 4 of 9
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0
V
ICCDR
Data Retention Current
300
A
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
Operation Recovery Time
200
s
Data Retention Waveform
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
Switching Waveforms
Read Cycle No. 1[9, 10]
Read Cycle No. 2 (OE Controlled)[10, 11]
Notes:
9.
Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GVT71256C36TA-6.7 | x36 Fast Synchronous SRAM |
| GVT71512B18B-6 | x18 Synchronous SRAM |
| GVT71512B18B-6.5 | x18 Synchronous SRAM |
| GVT71512B18B-7 | x18 Synchronous SRAM |
| GVT71512B18T-6 | x18 Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GVT71256C36TA-6.7 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x36 Fast Synchronous SRAM |
| GVT71256D36T-5 | 制造商:Cypress Semiconductor 功能描述: |
| GVT71256D36TA5 | 制造商:GALVANTECH 功能描述:New |
| GVT71256DA18T-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| GVT71256E18T-10T | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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