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參數(shù)資料
| 型號： | H11G23S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 封裝： | SURFACE MOUNT PACKAGE-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 300K |
| 代理商： | H11G23S |
1
Motorola Optoelectronics Device Data
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! "!"! !
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base–emitter resistors. The on–chip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
High CTR, H11G1 & H11G2 — 1000% (@
IF = 10 mA), 500% (@ IF = 1 mA)
High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Interfacing and coupling systems of different potentials and impedances
Phase and Feedback Controls
General Purpose Switching Circuits
Solid State Relays
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
IF
IF
6
Volts
Forward Current — Continuous
60
mA
Forward Current — Peak
Pulse Width = 300
μ
s, 2% Duty Cycle
3
Amps
LED Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
120
1.41
mW
mW/
°
C
OUTPUT DETECTOR
Collector–Emitter Voltage
H11G1
H11G2
H11G3
VCEO
100
80
55
Volts
Emitter–Base Voltage
VEBO
IC
PD
7
Volts
Collector Current — Continuous
150
mA
Detector Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
150
1.76
mW
mW/
°
C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
Operating Junction Temperature Range(2)
Storage Temperature Range(2)
PD
250
2.94
mW
mW/
°
C
TA
Tstg
TL
VISO
–55 to +100
°
C
–55 to +150
°
C
Soldering Temperature (10 s)
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
260
°
C
7500
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by H11G1/D
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
*Motorola Preferred Devices
SCHEMATIC
[CTR = 1000% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
[CTR = 1000% Min]
[CTR = 200% Min]
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
6
1
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H11G2W | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| H11G23SD | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| H11G2S | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| H11G2SD | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| H11G3 | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11G23SD | 功能描述:晶體管輸出光電耦合器 Hi Volt Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G2M | 功能描述:晶體管輸出光電耦合器 HIGH VOLTAGE PHOTODARLINGTON RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G2M_F132 | 功能描述:晶體管輸出光電耦合器 High Voltage Photodarlington Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G2S | 功能描述:晶體管輸出光電耦合器 Hi Volt Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G2SD | 功能描述:晶體管輸出光電耦合器 Hi Volt Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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