參數(shù)資料
型號(hào): H11G2
廠商: MOTOROLA INC
元件分類: 光電耦合器
英文描述: 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)
中文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
文件頁數(shù): 2/6頁
文件大?。?/td> 300K
代理商: H11G2
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
Reverse Leakage Current (VR = 3 V)
Forward Voltage IF = 10 mA)
Capacitance (V = 0 V, f = 1 MHz)
IR
VF
CJ
0.05
10
μ
A
1.1
1.5
Volts
18
pF
DARLINGTON OUTPUT
(TA = 25
°
C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CEO
100
80
55
Volts
Collector–Base Breakdown Voltage
(IC = 100
μ
A, IF = 0)
H11G1
H11G2
H11G3
V(BR)CBO
100
80
55
Volts
Emitter–Base Breakdown Voltage (IE = 100
μ
A, IF = 0)
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80
°
C)
(VCE = 60 V)
(VCE = 60 V, TA = 80
°
C)
(VCE = 30 V)
Capacitance (VCB = 10 V, f = 1 MHz)
COUPLED
(TA = 25
°
C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
Isolation Resistance(3) (V = 500 Vdc)
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
V(BR)EBO
ICEO
7
Volts
H11G1
H11G1
H11G2
H11G2
H11G3
100
100
100
100
100
nA
μ
A
nA
μ
A
nA
CCB
6
pF
H11G1, 2
H11G1, 2
H11G3
IC (CTR)(2)
100 (1000)
5 (500)
2 (200)
mA (%)
H11G1, 2
H11G1, 2
H11G3
VCE(sat)
0.75
0.85
0.85
1
1
1.2
Volts
VISO
7500
Vac(pk)
1011
Ohms
CIO
2
pF
SWITCHING
(TA = 25
°
C)
Turn–On Time
Pulse Width
300
μ
s, f = 30 Hz)
ton
toff
5
μ
s
Turn–Off Time
(IF = 10 mA, VCC = 5 V, RL = 100
,
100
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
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