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參數(shù)資料
| 型號： | H5N2005DL |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | H5N2005DL |
H5N2005DL, H5N2005DS
3
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A, V
GS
= 10 V
Note 4
Zero gate voltage drain current
—
—
1
Gate to source cutoff voltage
(3.0)
—
(4.5)
V
Static drain to source on state
resistance
—
(0.52)
(0.65)
Forward transfer admittance
|y
fs
|
Ciss
(2.0)
(3.4)
—
S
I
D
= 3 A, V
DS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
(300)
—
pF
Output capacitance
Coss
—
(50)
—
pF
Reverse transfer capacitance
Crss
—
(14)
—
pF
Total Gate charge
Qg
—
(9.5)
—
nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 6 A
I
D
= 3 A
V
GS
= 10 V
R
L
= 33.3
Rg = 10
Gate to source charge
Qgs
—
(1.8)
—
nC
Gateto drain charge
Qgd
—
(5.2)
—
nC
Turn-on delay time
td(on)
—
(19)
—
ns
Rise time
tr
—
(16)
—
ns
Turn-off delay time
td(off)
—
(44)
—
ns
Fall time
tf
—
(12)
—
ns
Body-drain diode forward
voltage
V
DF
—
(1.0)
(1.5)
V
I
F
= 6 A, V
GS
= 0
Body-drain diode reverse
recovery time
trr
—
(90)
—
ns
I
F
= 6 A, V
GS
= 0
Body-drain diode reverse
recovery charge
Note:
4. Pulse test
Qrr
—
(300)
—
nC
diF/dt = 100 A/us
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PDF描述 |
|---|---|
| H5N2005DS | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2509P | SILICON N CHANNEL MOSFET SWITCHING |
| H6052 | 3-Pin Voltage Surveillance with Time-out |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2005DL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2007FN | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2007FN-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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