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參數(shù)資料
| 型號： | H5N2005DS |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | H5N2005DS |
H5N2005DL, H5N2005DS
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
Note 1
I
DR
200
V
Gate to source voltage
±
30
V
Drain current
(6)
A
Drain peak current
(24)
A
Body-drain diode reverse drain
current
(6)
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note 1
(24)
A
Channel dissipation
Pch
Note 2
25
W
Channel to case thermal impedance
θ
ch-c
5
°
C/W
°
C
°
C
Channel temperature
Tch
150
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2005DSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2007FN | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2007FN-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2008P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2008P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine |
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