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參數(shù)資料
| 型號(hào)： | H5N2509P |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | SILICON N CHANNEL MOSFET SWITCHING |
| 中文描述： | 硅N通道MOSFET開關(guān) |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 263K |
| 代理商： | H5N2509P |
H5N2509P
2
(Ta = 25
°
C)
·
V
DSS
V
GSS
I
D
250
±30
30
120
30
120
30
150
0.833
150
V
V
A
A
A
A
A
W
·
I
D
(pulse)
I
DR
I
DR
(pulse)
I
AP
Pch
θ
ch-c
Tch
Tstg
1
1
3
2
°
C/W
°
C
°
C
–55 to +150
1. PW
2. Tc = 25
3. Tch
10
μ
s, duty cycle
1%
150
(Ta = 25
°
C)
Min
250
—
—
3.0
—
17
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.053
28
3600
450
115
48
120
190
110
110
19
53
0.9
210
1.8
Max
—
±0.1
1
4.0
0.069
—
—
—
—
—
—
—
—
—
—
—
1.35
—
—
·
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
Qrr
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 250 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
I
D
= 15 A, V
DS
= 10 V
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 15 A
V
GS
= 10 V
R
L
= 8.3
Rg = 10
V
DD
= 200 V
V
GS
= 10 V
I
D
= 30 A
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0
diF/dt = 100 A/
μ
s
·
·
4
4
·
·
4.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2509P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P |
| H5N2510DL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2510DL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2510DS | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube |
| H5N2510DS-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 5A 3-Pin(2+Tab) DPAK(S) Box |
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