參數(shù)資料
型號: H5N3003P
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 5/10頁
文件大小: 133K
代理商: H5N3003P
H5N3003P
Rev.2.00, Aug.01.2003, page 5 of 9
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
5
4
3
2
1
0
4
8
12
16
20
1
5
20
100
2
10
50
0.2
0.1
0.05
0.02
0.01
0.2
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
25
°
C
Tc = –25
°
C
75
°
C
V = 10 V
10 A
20 A
I = 40 A
I = 40 A
20 A
10 A
V = 10 V,15 V
Pulse Test
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
Case Temperature Tc (
°
C)
S
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V = 10 V
Pulse Test
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