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參數(shù)資料
| 型號(hào)： | H5N3007CF |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | H5N3007CF |
H5N3007CF
Rev.1.00, Nov.11.2004, page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Min
300
—
—
1.5
—
Typ
—
—
—
—
0.12
Max
—
±
0.1
10
4.0
0.16
Unit
V
μ
A
μ
A
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 300 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 7.5 A, V
GS
= 10 V
Note 4
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
9
—
—
—
—
—
—
—
—
—
—
—
—
15
2180
275
77
35
50
160
40
81
10
38
0.85
110
—
—
—
—
—
—
—
—
—
—
—
1.3
—
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
I
D
= 7.5 A, V
DS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1MHz
I
D
= 7.5 A
R
L
= 20
V
GS
= 10 V
R
g
= 10
V
DD
= 240 V
V
GS
= 10 V
I
D
= 15 A
I
F
= 15 A, V
GS
= 0
Note4
I
F
= 15 A, V
GS
= 0
diF/ dt = 100 A/
μ
s
Qrr
—
0.44
—
μ
C
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