- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371760 > H5N5015P PDF資料下載
參數(shù)資料
| 型號： | H5N5015P |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 49K |
| 代理商： | H5N5015P |
H5N5001FM
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±
0.1
μ
A
μ
A
V
GS
=
±
30V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 2.5A, V
GS
= 10V
Note4
Zero gate voltege drain current I
DSS
Gate to source cutoff voltage
—
—
1
V
GS(off)
R
DS(on)
3.0
—
4.0
V
Static drain to source on state
resistance
—
1.1
1.5
Forward transfer admittance
|y
fs
|
Ciss
3.0
4.5
—
S
I
D
= 2.5A, V
DS
= 10V
Note4
V
DS
= 25V
V
GS
= 0
f = 1MHz
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
70
—
pF
Reverse transfer capacitance
Crss
—
13
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
Qg
—
20
—
ns
I
D
= 2.5A
V
GS
= 10V
R
L
= 100
R
g
= 10
V
DD
= 400V
V
GS
= 10V
I
D
= 5A
I
F
= 5A, V
GS
= 0
Rise time
—
15
—
ns
Turn-off delay time
—
65
—
ns
Fall time
—
15
—
ns
Total gate charge
—
15
—
nC
Gate to source charge
Qgs
—
3
—
nC
Gate to drain charge
Qgd
—
8
—
nC
Body–drain diode forward
voltage
V
DF
—
0.85
1.3
V
Body–drain diode reverse
recovery time
t
rr
—
400
—
ns
I
= 5A, V
= 0
diF/ dt =100A/
μ
s
Body–drain diode reverse
recovery charge
Note:
4. Pulse test
Q
rr
—
1.5
—
μ
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H5N6001P | |
| H5P0301SM | |
| H7N0203AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0308AB | Datasheet|ADE-208-1569B|AUG.07.02|121K |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N5015P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N5016PL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5016PL(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N6001P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| H5N6001P_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。