參數(shù)資料
型號: H7N0310LD
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數(shù): 9/14頁
文件大?。?/td> 131K
代理商: H7N0310LD
H7N0310LD, H7N0310LS, H7N0310LM
Rev.3, Aug. 2002, page 7 of 7
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage V (V)
R
D
N
s
γ
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
5 V
V = 0
10 V
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
DM
P
PW
T
D =T
θ
ch
c(t) =
γ
s (t)
θ
ch
c
θ
ch
c = 2.5
°
C/ W, Tc = 25
°
C
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