參數(shù)資料
型號: H7N0312LD
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 4/13頁
文件大?。?/td> 133K
代理商: H7N0312LD
H7N0312LD, H7N0312LS, H7N0312LM
Rev.1, Aug. 2002, page 2 of 11
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
30
V
Gate to source voltage
±20
V
Drain current
85
A
Drain peak current
Note 1
340
A
Body-drain diode reverse drain current I
DR
Channel dissipation
85
A
Pch
θ
ch-c
Tch
Note 2
125
W
Channel to Case Thermal Impedance
1.0
°C/W
Channel temperature
150
°C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H7N0312LD_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0312LD-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0312LM 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 85A 3PIN LDPAK(S)-(2) - Tape and Reel
H7N0312LMTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching