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參數(shù)資料
| 型號(hào)： | H7N0608LD |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | H7N0608LD |
H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 5 of 11
0
4
8
12
16
20
500
400
300
200
100
I
D
= 50 A
20 A
10 A
1
30
100
3
100
1
10
1000
10
3
30
300
V
GS
= 4.5 V
10 V
0.1
0.3
1
3
10
100
1000
300
30
10
1
3
0.3
0.1
Tc = –40
°
C
150
°
C
25
°
C
V
DS
= 10 V
Pulse Test
20
16
12
8
4
–50
0
–25
25
50
75 100 125 150
0
V
GS
= 10 V
4.5 V
50 A
10, 20 A
10, 20, 50 A
30
100
Pulse Test
Pulse Test
Pulse Test
Drain Current I
D
(A)
D
D
(
)
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0608LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004LD | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004M | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | Silicon N-Channel MOSFET High-Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0608LM | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LS-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H7N1002AB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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