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參數(shù)資料
| 型號： | H7N0608LM |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | H7N0608LM |
H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 2 of 11
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
±
20
70
V
Gate to source voltage
V
GSS
V
Drain current
I
D
I
D
(pulse)
Note1
A
Drain peak current
280
A
Body-drain diode reverse drain current
I
DR
70
A
Avalanche current
I
AP
Note3
40
A
Avalanche energy
E
AR
Pch
Note2
Note3
137
mJ
Channel dissipation
80
W
°
C
°
C
Channel temperature
Tch
150
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0608LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004LD | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004M | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS | Silicon N-Channel MOSFET High-Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0608LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LS-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H7N1002AB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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